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BT169D Datasheet PDF

WeEn Semiconductors BT169D

This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits.
Part No. BT169D
Datasheet BT169D Download
Manufacturer
WeEn Semiconductors
Description SCR
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BT169D datasheet page 1 preview

FEATURES AND BENEFITS

● Planar passivated for voltage ruggedness and reliability
● Sensitive gate
● Direct triggering from low power gate circuits and logic ICs 3.

APPLICATIONS

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● Ignition circuits Lighting ballasts Protection circuits Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Absolute maximum rating VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tlead ≤ 83 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms; state current Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C; Fig. 7 Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 268 V; Tj = 125 °C; RGK = 1 kΩ; (VDM = 67% of VDRM); exponential waveform; Fig. 12 VDM = 268 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig.
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