Inchange Semiconductor BU105
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BU105 |
|---|---|
| Datasheet | BU105 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Voltage-VCER= 1300V(Min.)●Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2.5A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in line operated B&W(19 and 20 inch 110℃ deflection circuits ) or color ( 11 and 14 inch 90℃ deflection circuits TV receivers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCER Collector-Emitter Voltage RBE= 100Ω 1300 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 90℃ TJ Junction Temperature 2.5 A 10 W 115 ℃ Tstg Storage Temperature -65~115 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU105ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.