Datasheet Details
| Part number | BU104D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.83 KB |
| Description | NPN Transistor |
| Datasheet | BU104D-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU104D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.83 KB |
| Description | NPN Transistor |
| Datasheet | BU104D-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEX VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage VBE= -5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Repetitive Base Current-Continuous Collector Power Dissipation @ TC= 25℃ Junction Temperature 400 V 400 V 150 V 6 V 7 A 15 A 3 A 85 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU104D isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU104 | Silicon NPN Power Transistor | Inchange Semiconductor |
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|---|---|
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