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BU103A - Silicon NPN Power Transistor

General Description

Continuous Collector Current-IC= 1A Collector Power Dissipation- : PC= 30W @TC= 25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for TV vertical applications.

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isc Silicon NPN Power Transistor BU103A DESCRIPTION ·Continuous Collector Current-IC= 1A ·Collector Power Dissipation- : PC= 30W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage RBE= 220Ω 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1 A PC Collector Power Dissipation@TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.0 ℃/W isc website：www.iscsemi.