BU105 Overview
Key Specifications
Description
High Voltage-VCER= 1300V(Min.) - Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2.5A - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | BU105 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 207.46 KB |
Pricing from 11.68 USD, available from Newark and Avnet.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 0 | 120+ : 11.68 USD 500+ : 8.11 USD 1000+ : 7.31 USD |
View Offer |
| Avnet | 0 | 120+ : 10.0492 USD 600+ : 6.90158 USD 1080+ : 6.50773 USD 2160+ : 6.47419 USD |
View Offer |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BU1006 | Vishay | Enhanced PowerBridge Rectifiers |
| BU1010A | Vishay | Enhanced PowerBridge Rectifiers |
| BU103DH | Jingdao | Bipolar Junction Transistor |
| BU103T | Jingdao | Bipolar Junction Transistor |
| BU1008 | Vishay | Enhanced PowerBridge Rectifiers |