High Voltage-VCER= 1300V(Min.)
Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 2.5A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in line operated B&W(19 and 20 inch 110℃
deflection circuits ) or
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isc Silicon NPN Power Transistor
BU105
DESCRIPTION ·High Voltage-VCER= 1300V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in line operated B&W(19 and 20 inch 110℃
deflection circuits ) or color ( 11 and 14 inch 90℃ deflection circuits TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1300
V
VCER
Collector-Emitter Voltage RBE= 100Ω
1300
V
VCEO
Collector-Emitter Voltage
750
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC= 90℃
TJ
Junction Temperature
2.
BU105 Datasheet
