• Part: BU103T
  • Description: Bipolar Junction Transistor
  • Category: Transistor
  • Manufacturer: Jingdao
  • Size: 106.42 KB
Download BU103T Datasheet PDF
Jingdao
BU103T
BU103T is Bipolar Junction Transistor manufactured by Jingdao.
FEATURES High voltage capability Features of good high temperature High switching speed 3.PACKAGE TO-92 4.Electrical Characteristics 4.1 Absolute Maximum Ratings Tamb= 25℃ unless specified PARAMETER Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current DC Current Gain Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Typical Frequency *: Pulse test tp≤300μs,δ≤2% BVCBO BVCEO BVEBO ICBO ICEO IEBO h FE- - sat - sat tr tf ts f T 1 Base(B) 2 Collector(C) 3 Emitter(E) SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg VALUE 650 400 9 1.8 0.8 19 150 -55~150 UNIT V V V A ℃ ℃ TEST CONDITION IC=1m A,IE=0 IC=1m A ,IB=0 IE=1m A,IC=0 VCB=650V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 VCE=5V, IC=1m A VCE=5V, IC=200m A IC=1A, IB=0.5A IC=1A,...