BU103T
BU103T is Bipolar Junction Transistor manufactured by Jingdao.
FEATURES
High voltage capability Features of good high temperature High switching speed
3.PACKAGE
TO-92
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
Tamb= 25℃ unless specified
PARAMETER
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current Power Dissipation
Ta=25℃ Tc=25℃
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Typical Frequency
*: Pulse test tp≤300μs,δ≤2%
BVCBO BVCEO BVEBO
ICBO ICEO IEBO h FE-
- sat
- sat tr tf ts f T
1 Base(B) 2 Collector(C) 3 Emitter(E)
SYMBOL VCBO VCEO VEBO IC
Ptot
Tj Tstg
VALUE
650 400 9 1.8 0.8 19 150 -55~150
UNIT V V V A
℃ ℃
TEST CONDITION
IC=1m A,IE=0 IC=1m A ,IB=0 IE=1m A,IC=0 VCB=650V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 VCE=5V, IC=1m A VCE=5V, IC=200m A IC=1A, IB=0.5A IC=1A,...