BU103DH - Bipolar Junction Transistor

Datasheet Summary

Features

High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．.

Jingdao

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Datasheet Details

Part number	BU103DH
Manufacturer	Jingdao
File Size	110.43 KB
Description	Bipolar Junction Transistor
Datasheet	BU103DH Datasheet
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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU103DH Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Charger and Switch-mode power supplies 2．FEATURES High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-92 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Emitter(E) 2 Collector(C) 3 Base(B) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg 800 500 9 1.6 0.

Published: Mar 18, 2020 |