Datasheet Details
| Part number | BU108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.15 KB |
| Description | NPN Transistor |
| Datasheet | BU108-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.15 KB |
| Description | NPN Transistor |
| Datasheet | BU108-INCHANGE.pdf |
|
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·High Voltage ·High Switching Speed ·Collector Current- IC = 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage CRT scanning applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 3.5 A IE Emitter Current-Continuous PC Collector Power Dissipation @VCE≤100V,TC≤95℃ TJ Junction Temperature 8.5 A 12.5 W 115 ℃ Tstg Storage Temperature -65~115 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.6 ℃/W BU108 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA ;
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