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BU127. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sust...
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ation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO IC Emitter-Base Voltage Collector Current-Continuous 6 V 10 A ICM Collector Current-Peak 15 A IB Base Current 4 A PC Collector Power Dissipation@TC=25℃ 62 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150
BU127 Datasheet
