Datasheet Details
| Part number | BU1506DF |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.98 KB |
| Description | NPN Transistor |
| Datasheet | BU1506DF-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU1506DF |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.98 KB |
| Description | NPN Transistor |
| Datasheet | BU1506DF-INCHANGE.pdf |
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·High Voltage ·High Speed Switching ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Base Voltage VBE= 0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 32 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.0 ℃/W BU1506DF isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA;
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