Datasheet Details
| Part number | BU212 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.23 KB |
| Description | NPN Transistor |
| Datasheet | BU212-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU212 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.23 KB |
| Description | NPN Transistor |
| Datasheet | BU212-INCHANGE.pdf |
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·High Collector-Base Breakdown Voltage- : V(BR)CBO= 750V (Min) ·High Current Capability ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal output and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 750 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 85 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU212 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU212 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
| Part Number | Description |
|---|---|
| BU210 | NPN Transistor |
| BU211 | NPN Transistor |
| BU204 | NPN Transistor |
| BU205 | NPN Transistor |
| BU207 | NPN Transistor |
| BU208 | NPN Transistor |
| BU208A | NPN Transistor |
| BU208D | NPN Transistor |
| BU209 | Silicon NPN Power Transistor |
| BU209A | NPN Transistor |