BU508DR
BU508DR is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Voltage Capability
- High Current Capability
- Fast Switching Speed
- Built-in Integrated Diode
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation @TC=25℃
Junction Temperature
℃
Tstg...
