BU508DR Description
·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU508DR TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT...