BU526 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching mode power supply. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU526 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...