Inchange Semiconductor BU607
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BU607 |
|---|---|
| Datasheet | BU607 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Voltage: VCEV= 330V(Min)●Fast Switching Speed- : tf= 0.75μs(Max)
●Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in horizontal deflection output stages of TV’s and CRT’sABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 90 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU607 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU607ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 200 V VCE(sat) Col...