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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s
and CRT’s.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
330
V
VCEV
Collector-Emitter Voltage
330
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
15
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
BU807FI
isc website：www.iscsemi.
BU807FI Datasheet
