BU806 Description
VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. IB=B 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A;.
BU806 is Silicon NPN Darlington Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
BU806 | 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS |
| BU806 | NPN Darlington Power Transistor | |
STMicroelectronics |
BU806 | MEDIUM VOLTAGE NPN TRANSISTORS |
| BU806 | Transistor | |
| BU806 | Silicon Darlington Power Transistors |
VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. IB=B 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A;.