| Part Number | BU806 Datasheet |
|---|---|
| Manufacturer | NTE Electronics |
| Overview | The BU806 is a silicon epitaxial planer NPN power Darlington transistor in a TO−220 type package with an integrated base−emitter speed−up diode designed for use in high voltage, high current, fast sw. . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
BU806 Datasheet and Specifications PDF
The BU806 is a Silicon NPN Transistor.
Key Specifications
| Mount Type | Bushing |
|---|
| Part Number | BU806 Datasheet |
|---|---|
| Description | NPN SILICON DARLINGTON TRANSISTOR |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications. MARKING: FULL PART NUMBER TO-220 CASE MA. 100mA (BU807) 150 VCE(SAT) IC=5.0A, IB=50mA VBE(SAT) IC=5.0A, IB=50mA VF IF=4.0A ton VCC=100V, IC=5.0A, IB1=50mA, IB2=500mA toff VCC=100V, IC=5.0A, IB1=50mA, IB2=500mA TYP 0.35 0.4 MAX 100 100 100 100 3.5 1.5 2.4 2.0 1.0 UNITS V V V V A A A W °C °C/W °C/W UNITS μA μA μA μA mA V V V V V μs μ. |
| Part Number | BU806 Datasheet |
|---|---|
| Description | 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU806/D NPN Darlington Power Transistor This Darlington transistor is a high voltage, high speed device for use in horizontal deflection. ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ. |
| Part Number | BU806 Datasheet |
|---|---|
| Description | MEDIUM VOLTAGE NPN TRANSISTORS |
| Manufacturer | STMicroelectronics |
| Overview | te cThe devices are silicon Epitaxial Planar NPN le upower transistors in Darlington configuration with dintegrated base-emitter speed-up diode, mounted so roin TO-220 plastic package. b PThey can be . . |