Inchange Semiconductor BU810
Silicon NPN Darlington Power Transistor
| Part No. | BU810 |
|---|---|
| Datasheet | BU810 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min)●High Switching Speed
APPLICATIONS
●Designed for use in high frequency and efficency converters, switching regulators and motor control.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 600 400 5 7 10 2 75 150 -65~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.66 UNIT ℃/W isc Website： INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU810 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 400 V VCE(sat)-1 Collector-Emitter S...