STMicroelectronics BU810
BU810 is a Multiepitaxial Planar NPN roTransistor in TO-220 package. It is intended for Puse in high frequency and efficency converters, leteswitching regulators and motor control.APPLICATIONS
s HORIZONTAL DEFLECTION FOR )MONOCHROME TVs t(ss GENERAL PURPOSE SWITCHING ucDESCRIPTION dThe 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM Product(s) - ObsoABSOLUTEMAXIMUM RATINGS
teSymbol Parameter leVCBO Collector-Base Voltage (IE = 0) soVCEO Collector-Emitter Voltage (IB = 0) ObVEBO Emitter-Base Voltage (IC = 0) R = 200 Ω Value 600 400 5 Unit V V V IC Collector Current 7A ICM Collector Peak Current 10 A IB Base Current Ptot Total Power Dissipation at Tcase ≤ 25 oC Tstg Storage Temperature Tj Junction Temperature 2 75 -65 to 150 150 A W oC oC December 2