Download BUF742 Datasheet PDF
Inchange Semiconductor
BUF742
BUF742 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Collector- Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) - Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 0.8A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current-Continuous Base Current-peak Collector Power Dissipation TC=25℃ Ti Junction Temperature ℃ Tstg Storage Temperature...