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BUF742 - NPN Transistor

General Description

Collector Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 0.8A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for electronic lamp ballast circuits switch

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 0.8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 11 V IC Collector Current-Continuous 5 A ICM Collector Current-peak 7.5 A IB Base Current-Continuous 2.