BUF742 Datasheet | TEMIC Semiconductors

Features D D D D D D D D D Simple-s Witch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 k Hz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 550 900 11 5 7.5 2.5 4 50 150 - 65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25°C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol Rth JC Value 2.5 Unit K/W TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 1 (8) Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage g DC forward current transfer ratio Test Conditions VCE = 900 V VCE = 900 V; Tcase = 150°C IC = 500 m A; L = 125 m H; Imeasure = 100 m A IE = 1 m A IC = 0.8 A; IB = 0.2 A IC = 2.5 A; IB = 0.8 A IC = 0.8 A; IB = 0.2 A IC = 2.5 A; IB = 0.8 A VCE = 2 V; IC = 10 m A VCE = 2 V; IC = 0.8 A VCE = 2 V; IC = 2.5 A VCE = 2 V; IC = 5 A VS = 50 V; L = 1 m H; IC = 2.5 A; IB1 = 0.5 A; - IB2 = 0.5 A; - VBE(off) = 5 V IC = 2.5 A; IB = 0.5 A; t = 1 ms IC = 2.5 A; IB = 0.5 A; t = 3 ms IC = 200 m A; VCE = 10 V; f = 1 MHz Symbol ICES ICES V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat h FE h FE h FE h FE VCEW Min Typ Max 10 200 Unit m A m A V V V V V V 400 11 0.2 0.4 1 1.2 15 15 7 4 500 Collector-emitter working voltage Dynamic y saturation voltage g Gain bandwidth product VCEsatdyn VCEsatdyn f T 7...