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BUP41 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.

General Description

·High Collector Current-IC= 6A ·Low Collector Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3A, IB= 0.1A ·High Switching Speed ·plement to Type BUP40 APPLICATIONS ·For audio amplifier and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 6A 10 W 150 ℃ -55~150 ℃ isc website:.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUP41 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;

IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 3A;

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