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BUP51 - NPN Transistor

Datasheet Summary

Description

With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor

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Datasheet Details

Part number BUP51
Manufacturer INCHANGE
File Size 201.78 KB
Description NPN Transistor
Datasheet download datasheet BUP51 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 175 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 80 A ICM Peak Collector Current 100 A PC Collector Power Dissipation 300 W TJ Junction Temperature -55~200 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Juncti
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