Datasheet4U Logo Datasheet4U.com

BUP51 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR

📥 Download Datasheet

Datasheet preview – BUP51

Datasheet Details

Part number BUP51
Manufacturer TT
File Size 190.47 KB
Description SILICON MULTI-EPITAXIAL NPN TRANSISTOR
Datasheet download datasheet BUP51 Datasheet
Additional preview pages of the BUP51 datasheet.

📁 Similar Datasheet

  • BUP51 - NPN Transistor (INCHANGE)
  • BUP50A - NPN Transistor (Seme LAB)
  • BUP52 - NPN Transistor (INCHANGE)
  • BUP54 - NPN Transistor (Seme LAB)
  • BUP54 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BUP56 - NPN Transistor (Seme LAB)
  • BUP06CN015E-01 - 60V Radiation Tolerant power MOSFET (Infineon)
  • BUP06CN035L-01 - 60V Radiation Tolerant power MOSFET (Infineon)
  • BUP15CN027E-01 - 150V Radiation Tolerant power MOSFET (Infineon)
  • BUP200 - IGBT (Siemens Semiconductor Group)
Other Datasheets by TT
  • BUP52 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR
  • BUP53 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR
  • BUP54 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR

Full PDF Text Transcription

Click to expand full text
SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP51 • Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEX Collector – Emitter Voltage VBE = -1.5V 250V VCEO Collector – Emitter Voltage 175V VEBO Emitter – Base Voltage 10V IC Continuous Collector Current 80A ICM Peak Collector Current 100A PD Total Power Dissipation at TC = 25°C 300W Derate Above 25°C 1.72W/°C TJ Junction Temperature Range -55 to +200°C Tstg Storage Temperature Range -55 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 0.
Published: |