Inchange Semiconductor BUS131
Silicon NPN Power Transistor
| Part No. | BUS131 |
|---|---|
| Datasheet | BUS131 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
High Switching Speed●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS131 500V (Min)-BUS131A
APPLICATIONS
●Designed for use in very fast switching applications in inductive circuits.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUS131 BUS131A 850 1000 V VCEO Collector-Emitter Voltage BUS131 BUS131A 450 500 V VEBO IC ICM IB IBM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 9 5 10 4 8 125 200 -65~200 V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.4 ℃/W● isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon N
