Inchange Semiconductor BUS132
Silicon NPN Power Transistor
| Part No. | BUS132 |
|---|---|
| Datasheet | BUS132 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Switching Speed●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS132 500V (Min)-BUS132A
APPLICATIONS
●Designed for use in very fast switching applications in inductive circuits.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUS132 850 BUS132A 1000 V VCEO Collector-Emitter Voltage BUS132 BUS132A 450 500 V VEBO IC ICM IB IBM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 9 8 16 6 12 150 200 -65~200 V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.17 ℃/W isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS132/AELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter...