Datasheet Details
| Part number | BUS46P |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.94 KB |
| Description | NPN Transistor |
| Datasheet | BUS46P-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUS46P |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.94 KB |
| Description | NPN Transistor |
| Datasheet | BUS46P-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W BUS46P isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUS46P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Part Number | Description |
|---|---|
| BUS48AP | NPN Transistor |
| BUS12A | NPN Transistor |