Inchange Semiconductor BUV61
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BUV61 |
|---|---|
| Datasheet | BUV61 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Current Capability●Fully characterized at 125℃
●Fast switching speed
●Motor control
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV VCEO Collector-Emitter Voltage (VBE= -1.5V) Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 300 V 200 V 7 V 50 A 75 A 8 A 15 A 250 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER...