BUV61 Datasheet | STMicroelectronics

DESCRIPTION The BUV61 is a Multi-Epitaxial planar NPN transistor in TO-3 metal case. It is intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. 1 2 TO-3 (version " S ") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P Base P tot T stg Tj Parameter Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Reverse Bias Base Dissipation (B.E. junction in avalanche) Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature Value 300 200 7 50 75 8 15 2 250 -65 to 200 200 Unit V V V A A A A W W o o October 2003 1/5 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CER I CEV Parameter Collector Cut-off Current (R BE = 10 Ω ) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 300 V V CE = 300 V V CE = 300V V CE = 300V V EB = 5 V I C = 0.2A L = 25 m H 200 T C = 100 o C T C =100 o C Min. Typ. Max. 1 5 1 4 1 Unit m A m A m A m A m A V I EBO V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) ∗ Emitter-base Voltage (I C = 0) Collector-Emitter Saturation Voltage I E = 50 m A IC IC IC IC IC IC IC IC IC IC = = = = = = = = = = 12.5A 25A 40A 12.5A 25A 40A 25A 40A 25A 40A IB IB IB IB IB IB IB IB IB IB = = = = = = = = = = 0.625A 2.5A 5A 0.625A T j = 100 o C 2.5A T j = 100 o C o 5A T j = 100 C 2.5A 5A 2.5A 5A 7 0.65 0.4 0.6 0.5 0.5 0.75 1.05 1.35 1.1 1.35 70 60 I B1 =2.5A 1.3 1.8 I B1 =2.5A 0.95 1.1 2 3 3 5 130 110 0.9 0.9 1.2 1.2 1.5 1.9 1.4 1.8 1.7 1.8 V V V V V V V V V A/ µ s A/ µ s V V V V V BE(sat) ∗ Base-Emitter Saturation Voltage T j = 100 o C T j = 100 o C I B1 =3.75A dic /dt ∗ Rated of Rise of on-state Collector Current...