STMicroelectronics BUV61
The BUV61 is a Multi-Epitaxial planar NPN transistor in TO-3 metal case. It is intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.| Part No. | BUV61 |
|---|---|
| Datasheet | BUV61 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH POWER NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
1 2 TO-3 (version " S ") INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO IC I CM IB I BM P Base P tot T stg Tj Parameter Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Reverse Bias Base Dissipation (B.E. junction in avalanche) Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature Value 300 200 7 50 75 8 15 2 250 -65 to 200 200 Unit V V V A A A A W W o o C C October 2003 1/5 BUV61 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV Parameter Collector Cut-off Current (R BE = 10 Ω ) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 300 V V CE = 300 V V CE = 300V V CE = 300V V EB = 5 V I C = 0.2A L = 25 mH 200 T C = 100 o C T C =100 o C Min.
