Datasheet Details
| Part number | BUX90 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.44 KB |
| Description | NPN Transistor |
| Datasheet | BUX90-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | BUX90 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.44 KB |
| Description | NPN Transistor |
| Datasheet | BUX90-INCHANGE.pdf |
|
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·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Reliability ·DARLINGTON ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition applications ·Inverters circuits for motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 650 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 5 IC Collector Current 12 ICM Collector Current-peak 20 IB Base Current 1 IBM Base Current-peak 5 PC Collector Power Dissipation @TC=25℃ 125 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BUX90 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BUX90 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A;
| Part Number | Description |
|---|---|
| BUX98A | NPN Transistor |
| BUX98AP | Silicon NPN Power Transistor |
| BUX98B | NPN Transistor |
| BUX10 | NPN Transistor |
| BUX11 | NPN Transistor |
| BUX16 | NPN Transistor |
| BUX16A | NPN Transistor |
| BUX16B | NPN Transistor |
| BUX16C | NPN Transistor |
| BUX17 | NPN Transistor |