Inchange Semiconductor BUX98C
Silicon NPN Power Transistor
DESCRIPTION
●High Voltage Capability●High Current Capability
●Fast Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High frequency and efficiency converters●Linear and switching industrial equipment
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 30 A ICM Collector Current-peak ( tp <5 ms ) 60 A IB Base Current-Continuous 8A IBM Base Current-peak ( tp <5 ms ) PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 30 A 250 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W isc website: 1 isc & iscsemi is registered trademark isc Silico