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BUX98C Datasheet HIGH POWER NPN SILICON TRANSISTOR

Manufacturer: STMicroelectronics

Overview: ® BUX98C HIGH POWER NPN SILICON TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS: HIGH FREQUENCY AND EFFICENCY.

General Description

The BUX98C is a Silicon Multi Epitaxial Mesa NPN transistor in Jedec TO-3 metal case, intended for use in switching and industrial applications from single and three-phase mains operations.

INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage (R BE ≤ 0 Ω ) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage Emitter-Base Voltage (I C = 0) IC Collector Current I CM Collector Peak Current (t p < 5 ms) I CMP Collector Peak Current non Repetitive IB Base Current I BM Base Peak Current (t p < 5 ms) P Total Dissipation at T c = 25 o C tot www.DataSheet4U.com T stg Storage Temperature Tj Max.

Operating Junction Temperature Symbol V CER V CES V CEO V EBO Parameter Value 1200 1200 700 7 30 60 80 8 30 250 -65 to 200 200 Unit V V V V A A A A A W o C o C September 2003 1/4 BUX98C THERMAL DATA R thj-case Thermal Resistance Junction-case o Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 Symbol I CER I CES I CEO I EBO Parameter Collector Cut-off Current (R BE = 10 Ω ) Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) C unless otherwise specified) Min.