BUY73 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 1.4V@ IC= 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for general switching applications at higher outputs.

INCHANGE

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Datasheet Details

Part number	BUY73
Manufacturer	Inchange Semiconductor
File Size	206.10 KB
Description	NPN Transistor
Datasheet	BUY73 Datasheet
Additional preview pages of the BUY73 datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.4V@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general switching applications at higher outputs.

Published: Sep 27, 2020 |