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BUY73 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 1.4V@ IC= 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for general switching applications at higher outputs.

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Full PDF Text Transcription for BUY73 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUY73. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.4V@ IC= 10A ·Mi...

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Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.4V@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general switching applications at higher outputs.

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