BUZ31H3046 - N-Channel MOSFET

Inchange Semiconductor

Key Features

Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

BUZ31H3046 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BUZ31H3046
Manufacturer	Inchange Semiconductor
File Size	231.15 KB
Description	N-Channel MOSFET
Datasheet	BUZ31H3046 Datasheet

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Full PDF Text Transcription (Reference)

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUZ31H3046 ·FEATURES ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 14.5 A IDM Drain Current-Single Pulsed 58 A PD Total Dissipation @TC=25℃ 95 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.32 ℃/W isc website：www.iscsemi.