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BUZ80 - N-Channel MOSFET

Key Features

  • High speed switching.
  • Low RDS(ON).
  • Easy driver for cost effective.

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Full PDF Text Transcription for BUZ80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUZ80. For precise diagrams, and layout, please refer to the original PDF.

isc N-Channel Mosfet Transistor BUZ80 ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·100% avalanche tested ·Minimum Lot-to-Lot ...

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cost effective application ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Switching mode power supplies ·DC-DC & DC-AC converter ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3.4 A IDM Drain Current-Single Plused 13 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max.