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BUZ 80A
SIPMOS ® Power Transistor
• N channel • Enhancement mode
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 80A
VDS
800 V
ID
3A
RDS(on)
3Ω
Package TO-220 AB
Ordering Code C67078-A1309-A3
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 800 800 Unit V
VDS VDGR ID
RGS = 20 kΩ
Continuous drain current
A 3
TC = 50 °C
Pulsed drain current
IDpuls
12
TC = 25 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 75
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... ...+ 150 °C -55 ... ...+ 150 ≤ 1.
BUZ80A Datasheet
