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isc N-Channel Mosfet Transistor
BUZ80FI
·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High current , high speed switching ·Switching mode power supplies ·DC-DC & DC-AC converter
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
2.1
A
IDM
Drain Current-Single Plused
13
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max.
BUZ80FI Datasheet
