Datasheet4U Logo Datasheet4U.com

BUZ80FI - N-Channel MOSFET

Key Features

  • High speed switching.
  • Low RDS(ON).
  • Easy driver for cost effective.

📥 Download Datasheet

Full PDF Text Transcription for BUZ80FI (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUZ80FI. For precise diagrams, and layout, please refer to the original PDF.

isc N-Channel Mosfet Transistor BUZ80FI ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·100% avalanche tested ·Minimum Lot-to-Lo...

View more extracted text
r cost effective application ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Switching mode power supplies ·DC-DC & DC-AC converter ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 2.1 A IDM Drain Current-Single Plused 13 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.