Inchange Semiconductor BYR16W-1200
Ultrafast Rectifier
FEATURES
●Fast switching●Low forward voltage drop
●Low thermal resistance
●Soft recovery characteristic
●Reduces switching losses in associated MOSFET or IGBT
●Planar passivated for voltage ruggedness and reliability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switched-Mode Power Supplies●Power factor correction diode
●Uninterrupted Power Supply
● Motor drive and SMPS freewheeling diode
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1200 V IF(AV) Average Rectified Forward Current;δ = 0.5; Tmb ≤ 98 °C; square-wave 16 A IFSM Nonrepetitive Peak Surge Current Sine-wave tp=10ms tp=8.3ms 150 165 A TJ Max.Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: 1 isc & iscsemi is registered trademark Ultrafast Rectifier INCHANGE Semiconductor BYR16W-1200ELECTRICAL CHARACTERISTICS
(Ta=25℃) SYMBOL PARAMETER VF...