NXP Semiconductors BYR16W-1200
Dual ultrafast power diode
| Part No. | BYR16W-1200 |
|---|---|
| Datasheet | BYR16W-1200 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Dual ultrafast power diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Fast switching● Low forward voltage drop
● Low thermal resistance
● Soft recovery characteristic
● Reduces switching losses in associated MOSFET or IGBT
● Planar passivated for voltage ruggedness and reliability 3.
APPLICATIONS
● Switched-Mode Power Supplies● Power factor correction diode
● Uninterrupted Power Supply
● Motor drive and SMPS freewheeling diode 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5; Tmb ≤ 98 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 Static characteristics VF forward voltage IF = 16 A; Tj = 125 °C; Fig. 6 Dynamic characteristics trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; Fig. 7
