Inchange Semiconductor C106D
Thyristors
FEATURES
●Glassivated surface for reliability and uniformity●Practical level triggering and holding characteristics
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation Is important.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current TA=30℃ IT(RMS) RMS on-state current ITM Surge peak on-state current PGM Peak gate power PG(AV) Average gate power Tj Operating Junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 400 400 2.55 4 20 0.5 0.1 110 -40 ~+150 3 75 UNIT V V A A A W W ℃ ℃ ℃/W ℃/WELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMET...