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Inchange Semiconductor
C106M
FEATURES - Glassivated surface for reliability and uniformity - Practical level triggering and holding characteristics - Designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation Is important. - Minimum Lot-to-Lot variations for robust device performance and reliable operation TO-126 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(AV) Average on-state current IT(RMS) RMS on-state current Peak gate power PG(AV) Average gate power ITSM Non-repetitive peak on-state current Tj Operating junction temperature Tstg Storage temperature 600 600 2.5 4 0.5 0.2 20 110 -40~+ 150 UNIT V V A A W W A ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRRM=600V VRRM=600V, Tj=...