C2120 - Silicon NPN Transistor

Datasheet Summary

Description

High hFE(1)=100-320 1 Watts Amplifier Applications Complement to Type 2SA950 APPLICATIONS Audio power amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	C2120
Manufacturer	INCHANGE
File Size	98.52 KB
Description	Silicon NPN Transistor
Datasheet	C2120 Datasheet
Additional preview pages of the C2120 datasheet.

📁 Similar Datasheet

C2120 - NPN Transistor (JIANGSU CHANGJIANG)
C2120 - Silicon NPN Transistor (Toshiba Semiconductor)
C2120 - NPN Transistor (SeCoS)
C2120 - NPN Transistor (Dc Components)
C2120 - NPN Transistor (SEMTECH)
C2120Y - CSC2120Y (ETC)
C2104 - Silicon NPN Transistor (Toshiba)
C2130 - NPN Transistor (JIANGSU CHANGJIANG)
C2131 - 2SC2131 (Mitsubishi)
C216 - Platform Controller (Intel)

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text

INCHANGE Semiconductor isc Silicon NPN Transistor isc Product Specification 2SC2120 DESCRIPTION ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950 APPLICATIONS ·Audio power amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT 35 V 30 V 5V 800 mA 160 mA 600 mW 150 ℃ -55~150 ℃ isc website：www.iscsemi.

Published: Jan 6, 2015 |