C2120 Datasheet
C2120 Datasheet (SeCoS Halbleitertechnologie GmbH)
SeCoS Halbleitertechnologie GmbH
Elektronische Bauelemente 2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC Current Gain Complementary .
High DC Current Gain Complementary to 2SA950 CLASSIFICATION OF hFE Product-Rank 2SC2120-O Range 100~200 2SC2120-Y 160~320 TO-92 GH J AD B K E CF 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TY.
C2120 Datasheet (Toshiba)
Toshiba
1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Compleme.
IC = 500 mA, IB = 20 mA VBE VCE = 1 V, IC = 10 mA fT VCE = 5 V, IC = 10 mA Cob VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 100~200, Y: 160~320 JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Min Typ. Max Unit 0.1 µA 0.1 µA 30 V 100 320 .
C2120 Datasheet (SEMTECH)
SEMTECH
ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special reque.
A, IB=20mA Transition Frequency at VCE=5V, IC=10mA Base Emitter Voltage at IC=10mA, VCE=1V Collector Output Capacitance at VCB=10V, f=1MHz Collector Emitter Breakdown Voltage at IC=10mA Symbol hFE hFE hFE ICBO IEBO VCE(sat) fT VBE COB VCEO Min. 100 160 35 0.5 30 G S P FORM A IS AVAILABLE Typ. 12.
C2120 Datasheet (Dc Components)
Dc Components
Designed for audio frequency amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emi.
e BVCEO 30 Emitter-Base Breakdown Volatge BVEBO 5 Collector Cutoff Current ICBO - Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) IEBO VCE(sat) VBE(sat) - DC Current Gain(1) hFE1 hFE2 45 100 hFE3 40 Transition Frequency fT - Output.