D1069
DESCRIPTION
- High Collector Current Capability
- High Collector Power Dissipation Capability
- Built-in Damper Diode
APPLICATIONS
- TV horizontal deflection output applications.
- High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
300 V
VCEO Collector-Emitter Voltage
150 V
VEBO Emitter-Base Voltage
6V
IC Collector Current-Continuous
7A
ICM Collector Current-Peak
15 A
IBB Base Current-Continuous
Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃
Tj Junction Temperature
Tstg Storage Ttemperature Range
2A
1.75 W
150 ℃
-55~150 ℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
2SD1069
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100m A; L= 50m H
V(BR)CBO Collector-Base Breakdown Voltage IC= 1m A; IE= 0
V(BR)EBO...
