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D291S45T
Fast Recovery Diode
FEATURES ·Full diffusion process,flat type ceramic tube package ·Double sides cooling,High current ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power converters ·AC/DC switching ·Phase controlled rectifying
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VR
Repetitive Peak Reverse Voltage
IF(AV)
Average Forward Current
IFSM
Surge Forward Current
TJ
Junction Temperature
Tstg
Storage Temperature Range
CONDITIONS
TC=85℃ Tj=125℃
VALUE UNIT
4500
V
290
A
4500
A
-40~125
℃
-40~140
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.11
UNIT ℃/W
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