Inchange Semiconductor D44H10
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | D44H10 |
|---|---|
| Datasheet | D44H10 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●Low Saturation Voltage●Fast Switching Speeds
●Complement to Type D45H10
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 80 V VEBO IC ICM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 5 V 10 A 20 A 50 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W D44H10 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44H10ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMET...