Rectron Semiconductor D44H10
SILICON POWER TRANSISTORS
FEATURES
* ...for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converter and power ampifiers. * Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 V (max.) @8.0A * Fast Switching Speeds * Complementary Pairs Simplifies DesignsMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified. MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted ) RATINGS SYMBOL Collector-Emitter voltage Emitter-Base voltage Collector current-Continutious -Peak (Note 1) Collector Power dissipation @TC=25OC @TA=25OC Thermal Resistance Lead Temperature for Soldering Purposes: 1/8" from case for 5 sec. Operating and Storage Junction Temperature Range Notes: 1. Pulse Width < 6.0mS, Duty Cycle < 50% 2. "Fully RoHS Compliant", "100% Sn Plating (Pb-free)". VCEO VEB IC Pd RqJA RqJ