Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 125V(Min)- D44Q1 = 175V(Min)- D44Q3 = 225V(Min)- D44Q5
High Switching Speed
Low Saturation Voltage
Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS
Designed for linear and swit
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isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 125V(Min)- D44Q1 = 175V(Min)- D44Q3 = 225V(Min)- D44Q5
·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
D44Q1
200
VCBO
Collector-Base Voltage
D44Q3
250
V
D44Q5
300
D44Q1
125
VCEO
Collector-Emitter Voltage D44Q3
175
V
D44Q5
225
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
PC
Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
4
A
31.25 W
1.
D44Q1 Datasheet
