D44Q3 Overview
Description
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 125V(Min)- D44Q1 = 175V(Min)- D44Q3 = 225V(Min)- D44Q5 - High Switching Speed - Low Saturation Voltage - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for linear and switching applications. SYMBOL PARAMETER VALUE UNIT D44Q1 200 VCBO Collector-Base Voltage D44Q3 250 V D44Q5 300 D44Q1 125 VCEO Collector-Emitter Voltage D44Q3 175 V D44Q5 225 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 31.25 W 1.67 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c 4 ℃/W Rth j-a ℃/W D44Q1/3/5 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage D44Q1 D44Q3 D44Q5 IC= 10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current D44Q1 D44Q3 D44Q5 VCB= 200V;IE= 0 VCB= 250V;IE= 0 VCB= 300V;IE= 0 hFE-1 DC Current Gain IC= 0.2A ; VCE= 10V hFE-2 DC Current Gain IC= 2A ; VCE= 10V fT Current-Gain-Bandwidth Product IC= 0.1A; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz Switching Times ton Delay Time tstg Storage Time tf Fall Time VCC= 50V IC= 1A; IB1= -IB2= 0.1A D44Q1/3/5 MIN TYP.
