D818 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) Low Collector Saturation Voltage High Switching Speed APPLICATIONS

Designed for color TV horizontal output applications.

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D818 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	D818
Manufacturer	Inchange Semiconductor
File Size	176.75 KB
Description	Silicon NPN Power Transistor
Datasheet	D818 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD818 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER MAX UNIT .iscsemVCBO Collector-Base Voltage 1500 V wwwVCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 2.5 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -2.5 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.